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isc Silicon NPN RF Transistor
LMBT3904LT1G
DESCRIPTION ·Low Noise Figure
NF = 5 dB(MAX) @VCE=5.0V, f=10Hz to 15.7kHz, IC=100uA, RS=1.0kΩ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers
and linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance Junction to Ambient
VALUE 60 40 6 200 0.35
-55~150 -55~150
185 357
UNIT V V V mA W ℃ ℃
℃/W ℃/W
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