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LMBT3904LT1G - NPN Transistor

General Description

Low Noise Figure NF = 5 dB(MAX) @VCE=5.0V, f=10Hz to 15.7kHz, IC=100uA, RS=1.0kΩ Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

and linear broadband amplifiers.

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isc Silicon NPN RF Transistor LMBT3904LT1G DESCRIPTION ·Low Noise Figure NF = 5 dB(MAX) @VCE=5.0V, f=10Hz to 15.7kHz, IC=100uA, RS=1.0kΩ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in low noise ,high-gain amplifiers and linear broadband amplifiers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance Junction to Ambient VALUE 60 40 6 200 0.35 -55~150 -55~150 185 357 UNIT V V V mA W ℃ ℃ ℃/W ℃/W isc website：www.iscsemi.