Datasheet Details
| Part number | MAC4DHMT4 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.54 KB |
| Description | Triac |
| Datasheet | MAC4DHMT4-INCHANGE.pdf |
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Overview: isc Triacs INCHANGE Semiconductor MAC4DHMT4.
| Part number | MAC4DHMT4 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 209.54 KB |
| Description | Triac |
| Datasheet | MAC4DHMT4-INCHANGE.pdf |
|
|
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·Small size surface mount DPAK package ·Passivated die for reliability and uniformity ·Low level triggering and holding characteristics ·Triggering in all four quadrants ·Blocking voltage to 600V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high volume,low cost ,industrial and consumer applications such as motor control;
process control;temperature,light and speed control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN VDRM Repetitive peak off-state voltage 600 IT(RMS) RMS on-state current (full sine wave;Tc=93℃) 4 ITSM Non-repetitive peak on-state current(Tj=110℃) 40 I2t I2t for fusing tp=8.3ms 6.6 UNIT V A A A2S IGM Peak gate current VGM Peak gate voltage 0.2 A 5 V PGM Peak gate power dissipation 0.5 W PG(AV) Average gate power dissipation 0.1 W Tj Operating junction temperature -40~110 ℃ Tstg Storage temperature -40~150 ℃ isc website： .iscsemi.
1 isc & iscsemi is registered trademark isc Triacs INCHANGE Semiconductor MAC4DHMT4 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IDRM Repetitive peak off-state current VD=VDRM, VD=VDRM, Tj=110℃ Ⅰ IGT Gate trigger current Ⅱ VD=12V;RL= 100Ω Ⅲ Ⅳ VTM On-state voltage IH Holding current IL Holding current VGT Gate trigger voltage IT= 6A VD= 12V Ⅰ VD= 12V，IG=5mA Ⅱ VD= 12V，IG=5mA Ⅲ VD= 12V，IG=5mA Ⅳ VD= 12V，IG=10mA VD=12V;
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