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MBR10100CS Datasheet PDF

Inchange Semiconductor MBR10100CS

Schottky Barrier Rectifier

Part No. MBR10100CS
Datasheet MBR10100CS Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBR10100CS datasheet page 1 preview

FEATURES

●With TO-263 packaging
●High junction temperature capability
●Low forward voltage drop
●High current capability
●Low power loss, high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Switching power supply
●Free-Wheeling diodes
●Reverse battery protection
●Center tap configuration

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 100 V IF(AV) Average Rectified Forward Current@Tc=136℃ 10 A Nonrepetitive Peak Surge Current IFSM ( 8.3ms single half sine-wave superimposed 100 A on rated load conditions) TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MBR10100CS isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR10100CS THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/W

ELECTRICAL CHARACTERISTICS

(Pulse Test: Pulse...
MBR10100CS page 2 preview