Inchange Semiconductor MBR10150CS
Schottky Barrier Rectifier
FEATURES
●With TO-252(DPAK) packaging●Low power loss
●High efficiency
●High frequency operation
●High surge capacity
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●High frequency inverters
●Freewheeling diodes
●Reverse battery protection
●Polarity protection applications
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current @Tc=142℃ VALUE UNI T 150 V 5 A IF(RMS) Forward rms current@Tc=142℃ 10 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 100 A rated load conditions,60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR10150CS THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/W ELECT...