Inchange Semiconductor MBR10150CT
Schottky Barrier Rectifier
FEATURES
●Metal silicon junction,majority carrier conduction●Low Power Loss/High Efficiency
●High current capability,low forward voltage drop
●High surge capability
●Guardring for overvoltage protection
●High temperature soldering guaranteed
●RoHS product
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFRM IFSM IRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ Peak Repetitive Forward Current (Rated VR,Square Wave,20kHz) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) Peak Repetitive Reverse Surge Current (20μs,