Inchange Semiconductor MBR10200CS2
Schottky Barrier Rectifier
| Part No. | MBR10200CS2 |
|---|---|
| Datasheet | MBR10200CS2 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●With TO-263 packaging●High junction temperature capability
●Low forward voltage drop
●High current capability
●Low power loss, high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Free-Wheeling diodes
●Reverse battery protection
●Center tap configuration
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 200 V IF(AV) Average Rectified Forward Current@Tc=140℃ 5 A Nonrepetitive Peak Surge Current IFSM （ 8.3ms single half sine-wave superimposed 100 A on rated load conditions） TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -50~150 ℃ MBR10200CS2 isc website： 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR10200CS2 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 2.0 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Puls...