Inchange Semiconductor MBR10200F
Schottky Barrier Rectifier
| Part No. | MBR10200F |
|---|---|
| Datasheet | MBR10200F Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●With TO-220F packaging●High junction temperature capability
●Low forward voltage
●High current capability
●Low power loss, high efficiency
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Free-Wheeling diodes
●Reverse battery protection
●Center tap configuration
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage IF(AV) Average Rectified Forward Current @Tc=110℃ VALUE UNI T 200 V 10 A Nonrepetitive Peak Surge Current IFSM (10ms single half sine-wave superimposed on 110 A rated load conditions) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ MBR10200F isc website： 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR10200F THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 4.0 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width=300μs,Duty Cy...