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MBR1050CT Datasheet PDF

Inchange Semiconductor MBR1050CT

Schottky Barrier Rectifier

MBR1050CT Specifications

  • Package : TO-220AB
  • Max Output Current : 5A
  • Min Breakdown Voltage : 50V
  • Terminals : 3
  • Forward Voltage : 800mV
  • Max Forward Surge : 120A
  • Reverse Recovery Time : 25ns
  • Power Dissipation : 400mW
  • Max Operating Temp : 150°C
  • Min Operating Temp : -65°C
Source: Octopart
Part No. MBR1050CT
Datasheet MBR1050CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBR1050CT datasheet page 1 preview

FEATURES

●Schottky Barrier Chip
●Low Power Loss/High Efficiency
●High current capability,low forward voltage drop
●High surge capability
●Guardring for overvoltage protection
●High temperature soldering guaranteed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage 50 V 35 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 105℃ 10 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 125 A wave, single phase, 60Hz) IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 1.0 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ dv/dt Voltage Rate of Change (Rated VR) 1000 V/μs isc website: 1 isc & isc...
MBR1050CT page 2 preview