Inchange Semiconductor MBR1060C
Schottky Barrier Rectifier
| Part No. | MBR1060C |
|---|---|
| Datasheet | MBR1060C Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●Low forward voltage drop●150℃ operating junction temperature
●High surge current capacity
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power Supply Output Rectification●Power Management
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current 10 A Non-repetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 125 A wave, single phase, 60Hz) TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website： 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR1060C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.2 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS IF= 5A ; TC= 25℃ IF= 5A ; TC= 125℃ VF Ma...