Inchange Semiconductor MBR1065
Schottky Barrier Rectifier
FEATURES
●Low Forward Voltage●170℃ Operating Junction Temperature
●Low Power Loss/High Efficiency
●High Surge Capacity
APPLICATIONS
●Power supply- output rectification●Power management
●Instrumentation MECHANICAL CHARACTERISTICS
●Case: Epoxy, Molded
●Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 65 IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 133℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 5 150 TJ Junction Temperature 170 V A A ℃ Tstg Storage Temperature Range -50~170 ℃ isc website: 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Rth j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient Product Specification MBR1065 MAX 2.0 60 UNIT ℃/W...