Inchange Semiconductor MBR1660CT
Schottky Barrier Rectifier
FEATURES
●Low Forward Voltage●150℃ Operating Junction Temperature
●Guaranteed Reverse Avalanche
●Low Power Loss/High Efficiency
●High Surge Capacity
●Low Stored Charge Majority Carrier Conduction MECHANICAL CHARACTERISTICS
●Case: Epoxy, Molded
●Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) IFSM IRRM Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Peak Repetitive Reverse Current (2.0μs, 1.0kHz) 60 42 60 16 125 0.5 V A A A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website: 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Jun...