Inchange Semiconductor MBR1665CT
Schottky Barrier Rectifier
FEATURES
●Low Forward Voltage●170℃ Operating Junction Temperature
●Guaranteed Reverse Avalanche
●Low Power Loss/High Efficiency
●High Surge Capacity
●Low Stored Charge Majority Carrier Conduction MECHANICAL CHARACTERISTICS
●Case: Epoxy, Molded
●Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 65 IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 100℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 16 210 TJ Junction Temperature 170 V A A ℃ Tstg Storage Temperature Range -50~170 ℃ isc website: 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Product Specification MBR1665CT MAX 2.0 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width=300μs,D...