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MBR1665CT Datasheet PDF

Inchange Semiconductor MBR1665CT

Schottky Barrier Rectifier

Part No. MBR1665CT
Datasheet MBR1665CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBR1665CT datasheet page 1 preview

FEATURES

●Low Forward Voltage
●170℃ Operating Junction Temperature
●Guaranteed Reverse Avalanche
●Low Power Loss/High Efficiency
●High Surge Capacity
●Low Stored Charge Majority Carrier Conduction MECHANICAL CHARACTERISTICS
●Case: Epoxy, Molded
●Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM DC Blocking Voltage 65 IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 100℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 16 210 TJ Junction Temperature 170 V A A ℃ Tstg Storage Temperature Range -50~170 ℃ isc website: 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Product Specification MBR1665CT MAX 2.0 UNIT ℃/W

ELECTRICAL CHARACTERISTICS

(Pulse Test: Pulse Width=300μs,D...
MBR1665CT page 2 preview