Inchange Semiconductor MBR20100CD
Schottky Barrier Rectifier
FEATURES
●Plastic material used carriers Underwriter Laboratory●Metal silicon junction, majority carrier conduction
●Low Power Loss,high Efficiency
●Guard ring for overvoltage protection
●High Surge Capability,High Current Capability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For use in low voltage,high frequency inverters,free wheeling and polarity protection applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VR Peak Repetitive Reverse Voltage DC Blocking Voltage IF(AV) IFSM TJ Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Max.Junction Temperature Tstg Storage Temperature Range VALUE UNIT 100 V 20 A 240*2 A 150 ℃ -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to CaseELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS 2 ℃/W MAX UNIT IF= 10A ; Tc= 25℃ VF Maximum Instantaneous...