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MBR20150CD - Schottky Barrier Rectifier

Key Features

  • Multilayer Metal -Silicon Potential Structure.
  • Low Leakage Current.
  • High Current Capability, High Efficiency.
  • High Junction Temperature Capability.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Schottky Barrier Rectifier MBR20150CD FEATURES ·Multilayer Metal -Silicon Potential Structure. ·Low Leakage Current. ·High Current Capability, High Efficiency. ·High Junction Temperature Capability. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·For use in low voltage,high frequency inverters, free wheeling and polarity protection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM IF(AV) IFSM TJ Tstg Peak Repetitive Reverse Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.