Inchange Semiconductor MBR20150CD
Schottky Barrier Rectifier
| Part No. | MBR20150CD |
|---|---|
| Datasheet | MBR20150CD Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●Multilayer Metal -Silicon Potential Structure.●Low Leakage Current.
●High Current Capability, High Efficiency.
●High Junction Temperature Capability.
●Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
●For use in low voltage,high frequency inverters, free wheeling and polarity protection applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM IF(AV) IFSM TJ Tstg Peak Repetitive Reverse Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Junction Temperature Storage Temperature Range VALUE 150 20 290*2 150 -40~150 UNIT V A A ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.0 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width=300μs,Duty Cycle≤1%) SYMBOL PARAMETER CONDITIONS MAX VF Maximum Instantaneous Forward Voltage IF= 10A ; Tc= 25℃ IF= 10A ; Tc= 125℃ 0.9 0.78 IR Maximum I...