Inchange Semiconductor MBR20200CTF
Schottky Barrier Rectifier
FEATURES
●Guard -Ring for Stress Protection●Low Forward Voltage
●High Operating Junction Temperature
●Low Power Loss/High Efficiency
●High surge capability
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS
●Case: Epoxy, Molded
●Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ 200 V 10 A Peak Repetitive Forward Current IFRM (Rated VR,Square Wave,20kHz) TC= 90℃ 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ dv/dt Voltage Rate of Change (Rated...