Inchange Semiconductor MBR2020CT
Schottky Barrier Rectifier
FEATURES
●Schottky Barrier Chip●Low Power Loss/High Efficiency
●High current capability,low forward voltage drop
●High surge capability
●Guardring for overvoltage protection
●High temperature soldering guaranteed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage 20 V 14 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 120℃ 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR2020CT THERMAL CHARACTERISTI...