Inchange Semiconductor MBR2030
Schottky Barrier Rectifier
FEATURES
●Metal silicon junction,majority carrier conduction●Low Power Loss/High Efficiency
●High current capability,low forward voltage drop
●High surge capability
●Guardring for overvoltage protection
●High temperature soldering guaranteed
●RoHS product
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 125℃ 300 V 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 180 A wave, single phase, 60Hz) IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 0.5 A TJ Junction Temperature -40~150 ℃ Tstg Storage Temperature Range -40~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc web...