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MBR2035CT Datasheet PDF

Inchange Semiconductor MBR2035CT

Schottky Barrier Rectifier

Part No. MBR2035CT
Datasheet MBR2035CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBR2035CT datasheet page 1 preview

FEATURES

●Schottky Barrier Chip
●Low Power Loss/High Efficiency
●High current capability,low forward voltage drop
●High surge capability
●Guardring for overvoltage protection
●High temperature soldering guaranteed
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage 35 V 24.5 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 120℃ 20 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier MBR2035CT THERMAL CHARACTERIS...
MBR2035CT page 2 preview