Inchange Semiconductor MBR2045CT
Schottky Barrier Rectifier
FEATURES
●Dual Rectifier Conduction, Positive Center Tap●Metal Silicon Junction, Majority Carrier Conduction
●Low Power Loss/High Efficiency
●High Current Capability, Low Forward Voltage Drop
●High Surge Capacity
●Guarding for Overvoltage protection
●For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection
APPLICATIONS
MECHANICAL CHARACTERISTICS●Case: Epoxy, Molded
●Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable
●High Temperature Soldering Guaranteed: 250℃ Max. for 10 Seconds
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM IF(AV) IFSM TJ DC Blocking Voltage Average Rectified Forward Current TC= 125℃ Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Junction Temperature 45 20 250 170 V A A ℃ Tstg Storage Temperature Range -50~170 ℃ isc website: 1 INCHANGE Semiconductor Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c...