Inchange Semiconductor MBR2545CT
Schottky Barrier Rectifier
FEATURES
●Schottky Barrier Chip●Dual Rectifier Conduction, Positive Center Tap
●Low Power Loss/High Efficiency
●High Current Capability, Low Forward Voltage Drop
●High Surge Capacity
●Guarding for Overvoltage protection
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 130℃ 30 A Nonrepetitive Peak Surge Current IFSM (Surge applied at rated load conditions half- 150 A wave, single phase, 60Hz) IRRM Peak Repetitive Reverse Surge Current 1.0 A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 1,000 V/μs MBR2545CT isc website: 1 isc & iscsem...