Inchange Semiconductor MBR30200CT
Schottky Barrier Rectifier
| Part No. | MBR30200CT |
|---|---|
| Datasheet | MBR30200CT Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●Plastic material used carriers Unerwriter Laboratory●Metal silicon rectifier, majonty carrier conduction
●Low Power Loss,High Efficiency
●Guard ring for transient protection
●High Surge Capability,High Current Capability
●100% tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag VALUE UNIT 200 V 140 V IF(AV) IFSM TJ Average Rectified Forward Current 30 A Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed 150 A on rated load conditions Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website： 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier...