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MBR3060 Datasheet PDF

Inchange Semiconductor MBR3060

Schottky Barrier Rectifier

Part No. MBR3060
Datasheet MBR3060 Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBR3060 datasheet page 1 preview

FEATURES

●Low forward voltage
●Guarding for stress protection
●150℃ operating junction temperature
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS
●Case: TO-220 package
●Mounting position: Any

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage VRMS Maximum RMS Voltage VDC Maximum DC Blocking Voltage 60 V 42 V 60 V IF(AV) IFSM TJ Average Rectified Forward Current 30 A Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load 300 A (JEDEC method) Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor MBR3060 MAX 1.4 40 UNIT ℃/W ℃/W

ELECTRICAL CHARACTERISTICS

(Pulse Test: Pulse Width≤300...
MBR3060 page 2 preview