Inchange Semiconductor MBR3060
Schottky Barrier Rectifier
FEATURES
●Low forward voltage●Guarding for stress protection
●150℃ operating junction temperature
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS
●Case: TO-220 package
●Mounting position: Any
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Peak Repetitive Reverse Voltage VRMS Maximum RMS Voltage VDC Maximum DC Blocking Voltage 60 V 42 V 60 V IF(AV) IFSM TJ Average Rectified Forward Current 30 A Peak Forward Surge Current, 8.3 ms single halfsine-wave superimposed on rated load 300 A (JEDEC method) Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient INCHANGE Semiconductor MBR3060 MAX 1.4 40 UNIT ℃/W ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width≤300...