Inchange Semiconductor MBR40120
Schottky Barrier Rectifier
| Part No. | MBR40120 |
|---|---|
| Datasheet | MBR40120 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●Low forward voltage●High surge capacity
●Low Power Loss,High Efficiency
●Guard ring for stress protection
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power supply-output rectification●Power management
●Instrumentation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 120 V IF(AV) Average Rectified Forward Current 40 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 330 A on rated load conditions TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 1000 V/μs isc website： 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBR40120 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.2 UNIT ℃/WELECTRICAL CHARACTERISTICS
(Pulse Test: Pulse Width=30...