Datasheet4U.com

MBR40200CT Datasheet PDF

Inchange Semiconductor MBR40200CT

Schottky Barrier Rectifier

Part No. MBR40200CT
Datasheet MBR40200CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
Buy Stock & Price
MBR40200CT datasheet page 1 preview

FEATURES

●Plastic material used carriers Unerwriter Laboratory
●Metal silicon rectifier, majonty carrier conduction
●Low Power Loss,High Efficiency
●Guard ring for transient protection
●High Surge Capability,High Current Capability
●100% tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag VALUE UNIT 200 V 140 V IF(AV) Average Rectified Forward Current 40 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 330 A on rated load conditions IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 1.0 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website: 1 isc...
MBR40200CT page 2 preview