Inchange Semiconductor MBR40200CT
Schottky Barrier Rectifier
FEATURES
●Plastic material used carriers Unerwriter Laboratory●Metal silicon rectifier, majonty carrier conduction
●Low Power Loss,High Efficiency
●Guard ring for transient protection
●High Surge Capability,High Current Capability
●100% tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For use in low voltage ,high frequency inverters,free wheeling and polarity protection applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltag VALUE UNIT 200 V 140 V IF(AV) Average Rectified Forward Current 40 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 330 A on rated load conditions IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 1.0 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website: 1 isc...