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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR60100CT
FEATURES ·Metal silicon junction, majority carrier conduction ·Low leakage current, low power loss, high efficiency ·Dual rectifier construction, positive center tap ·Guardring for overvoltage protection ·High frequency operation ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Converters ·Free-Wheeling diodes ·Reverse battery protection ·Center tap configuration
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNI T
VRRM VRMS
VR
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
100
100
V
100
IF(AV)
Average Rectified Forward Current
Top device Per leg
60 30
A
Nonrepetitiv
MBR60100CT Datasheet
