Inchange Semiconductor MBR60100CT
Schottky Barrier Rectifier
| Part No. | MBR60100CT |
|---|---|
| Datasheet | MBR60100CT Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Schottky Barrier Rectifier |
| Buy | Stock & Price |
FEATURES
●Metal silicon junction, majority carrier conduction●Low leakage current, low power loss, high efficiency
●Dual rectifier construction, positive center tap
●Guardring for overvoltage protection
●High frequency operation
●Low stored charge majority carrier conduction
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Switching power supply●Converters
●Free-Wheeling diodes
●Reverse battery protection
●Center tap configuration
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNI T VRRM VRMS VR Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage 100 100 V 100 IF(AV) Average Rectified Forward Current Top device Per leg 60 30 A Nonrepetitive Peak Surge Current IFSM (8.3ms single half sine-wave superimposed on 350 A rated load conditions) IRRM Peak Repetitive Reverse Current per leg at tp = 2µs, 1KHz 1.0 mA TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website： 1 isc & iscsemi is regi...