Inchange Semiconductor MBR6045PT
Schottky Barrier Rectifier
FEATURES
●Low Forward Voltage●Low Power Loss,High Efficiency
●High Surge Capability
●175℃ Operating Junction Temperature
●Pb-Free Package is Available
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Power Supply-Output Rectification●Power Management
●Instrumentation
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR IF(AV) IFSM IRRM Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 45 60 500 2.0 V A A A TJ Junction Temperature -65~175 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website: 1 isc & iscsemi is reg