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MBR760 Datasheet PDF

Inchange Semiconductor MBR760

Schottky Barrier Rectifier

Part No. MBR760
Datasheet MBR760 Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBR760 datasheet page 1 preview

FEATURES

●Schottky Barrier Chip
●Guard Ring Die Construction for Transient Protection
●Low Power Loss/High Efficiency
●High Surge Capability
●High Current Capability,Low Forward Voltage Drop
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage IF(AV) IFSM Average Rectified Forward Current (Rated VR) TC= 125℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60Hz) 60 42 7.5 150 V V A A TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website: 1 isc & iscsemi is registered tra
MBR760 page 2 preview