Inchange Semiconductor MBRB1045
Schottky Barrier Rectifier
FEATURES
●Schottky barrier chip●Low Power Loss/High Efficiency
●High Operating Junction Temperature
●Low Forward Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●For use in high frequency rectifier of switching mode Power supplies, freewheeling diodes, DC-to-DC converters Or polarity protection application.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 45 V IF(AV) Average Rectified Forward Current 10 A IFSM Nonrepetitive Peak Surge Current (Surge applied at rated load conditions 150 A halfwave ,,single phase,60Hz) TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website: isc &1 iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRB1045 THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W ELECTRICAL CHARACTERISTIC...