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MBRB2560CT Datasheet PDF

Inchange Semiconductor MBRB2560CT

Schottky Barrier Rectifier

Part No. MBRB2560CT
Datasheet MBRB2560CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBRB2560CT datasheet page 1 preview

FEATURES

●Low forward voltage
●Low Power Loss,high Efficiency
●Guard ring for over voltage protection
●High Surge Capability,High Current Capability
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●For use in low voltage,high frequency inverters,free wheeling and polarity protection applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 60 V IF(AV) Average Rectified Forward Current 30 A Non-repetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed 150 A on rated load conditions TJ Junction Temperature -65~150 ℃ Tstg Storage Temperature Range -65~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10000 V/μs isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRB2560CT THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.5 UNI...
MBRB2560CT page 2 preview