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MBRB3035CT Datasheet PDF

Inchange Semiconductor MBRB3035CT

Schottky Barrier Rectifier

Part No. MBRB3035CT
Datasheet MBRB3035CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBRB3035CT datasheet page 1 preview

FEATURES

●Schottky Barrier Chip
●Dual Rectifier Conduction
●Low Power Loss/High Efficiency
●High Current Capability, Low Forward Voltage Drop
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage 35 V 24.5 V IF(AV) IFSM TJ Average Rectified Forward Current (Rated VR) TC= 100℃ 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- 200 A wave, single phase, 60Hz) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRB3035CT THERMAL CHARACTERISTICS SYMBOL PARAMET...
MBRB3035CT page 2 preview