MBRB3035CT Datasheet | Inchange Semiconductor

FEATURES - Schottky Barrier Chip - Dual Rectifier Conduction - Low Power Loss/High Efficiency - High Current Capability, Low Forward Voltage Drop - Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS - Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications . ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage IF(AV) IFSM TJ Average Rectified Forward Current (Rated VR) TC= 100℃ Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- A wave, single phase, 60Hz) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website：.iscsemi. 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to...