Inchange Semiconductor MBRB3035CT
Schottky Barrier Rectifier
FEATURES
●Schottky Barrier Chip●Dual Rectifier Conduction
●Low Power Loss/High Efficiency
●High Current Capability, Low Forward Voltage Drop
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for low-voltage,high frequency inverters,free wheeling and polarrity protection applications .ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR VR(RMS) Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage 35 V 24.5 V IF(AV) IFSM TJ Average Rectified Forward Current (Rated VR) TC= 100℃ 30 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions half- 200 A wave, single phase, 60Hz) Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~175 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRB3035CT THERMAL CHARACTERISTICS SYMBOL PARAMET...