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MBRF10H150CT Datasheet PDF

Inchange Semiconductor MBRF10H150CT

Schottky Barrier Rectifier

Part No. MBRF10H150CT
Datasheet MBRF10H150CT Download
Manufacturer
Inchange Semiconductor
Description Schottky Barrier Rectifier
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MBRF10H150CT datasheet page 1 preview

FEATURES

●Schottky barrier chip
●Low Power Loss,High Efficiency
●Guard ring for transient protection
●High Operating Junction Temperature
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

APPLICATIONS

●For use in high frequency rectifier of switching mode power supplies,freewheeling diodes,DC-to-DC converters or polarity protection application.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current 150 V 10 A Nonrepetitive Peak Surge Current IFSM 8.3ms single half sine-wave superimposed on 150 rated load conditions A TJ Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -65~175 ℃ isc website: 1 isc & iscsemi is registered trademark Schottky Barrier Rectifier INCHANGE Semiconductor MBRF1
MBRF10H150CT page 2 preview