MBRF20150CT Datasheet PDF

FEATURES

●Low power loss, high efficiency.
●Multilayer Metal -Silicon Potential Structure.
●Beautiful High Temperature Character.
●Have Over Voltage protect loop，high reliability. MECHANICAL CHARACTERISTICS
●Be optimized for ultra-low forward voltage drop to maximize efficiency in Power Supply applications.

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM IF(AV) IFSM DC Blocking Voltage Average Rectified Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C Nonrepetitive Peak Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 150 20 150 TJ Junction Temperature -40~150 V A A ℃ Tstg Storage Temperature Range -40~150 ℃ isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier Product Specification MBRF20150

ELECTRICAL CHARACTERISTICS

(Pulse Test: Pulse Wid