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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBRF30200CT
FEATURES ·Plastic material used carriers Underwriter Laboratory ·Metal silicon junction, majority carrier conduction ·Low IR ·Low VF ·Center tap connection ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·For use in low voltage,high frequency inverters,free wheeling
and polarity protection applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VRRM Peak Repetitive Reverse Voltage
200
VRWM Working Peak Reverse Voltage
140
V
VR
DC Blocking Voltage tw=500ns;duty=1/40
200
IF(AV)
Average Rectified Forward Current
30
A
IF(RMS)
RMS Forward current (Rated VR,Sqqre Wave,20KHz)
30
A
Nonrepetitive Peak Surge Current
IFSM
8.