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MCR106-8 Datasheet PDF

Inchange Semiconductor MCR106-8

Thyristors

Part No. MCR106-8
Datasheet MCR106-8 Download
Manufacturer
Inchange Semiconductor
Description Thyristors
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MCR106-8 datasheet page 1 preview

FEATURES

●Low Thermal Resistance
●High Heat Dissipation and Durability
●Designed for high volume consumer applications such as temperature, light and speed control; process and remote control, and warning systems and etc.
●Minimum Lot-to-Lot variations for robust device performance and reliable operation

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM VRRM IT(AV) IT(RMS) PGM PG(AV) Tj Repetitive peak off-state voltage Repetitive peak off-state voltage Average on-state current TC=93℃ on-state RMScurrent TC=93℃ Peak gate power TC=93℃ Average gate power TC=93℃ Operating junction temperature 600 V 600 V 2.55 A 4 A 0.5 W 0.1 W 110 ℃ Tstg Storage temperature -40~+ 150 ℃

ELECTRICAL CHARACTERISTICS

(TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current VRRM=400V VRRM=400V, Tj= 110℃ IDRM Repetitive peak off-state current VDRM=400V VDRM=400V, Tj= 110℃ IGT Gate trigger current VD= 7V; RL=100Ω MIN MAX UNIT 10 200 μA 10 200 μA 200 μA VTM...