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MCR8SDG - Thyristors

General Description

With TO-220 packaging High surge capability Glass passivated junctions and center gate fire for greater parameter uniformity and stability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMU

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isc Thyristors MCR8SDG DESCRIPTION ·With TO-220 packaging ·High surge capability ·Glass passivated junctions and center gate fire for greater parameter uniformity and stability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM VRRM IT(RMS) ITSM PG(AV) Tj Repetitive peak off-state voltage Repetitive peak reverse voltage RMS on-state current @Tc=80℃ Surge non-repetitive on-state current ( 1/2 cycle,sine wave;Tj=110℃ ) Average gate power dissipation Operating junction temperature Tp=8.3ms 60Hz 400 V 400 V 8 A 80 A 0.