Inchange Semiconductor MD2001FX
NPN Transistor
| Part No. | MD2001FX |
|---|---|
| Datasheet | MD2001FX Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min)●High Switching Speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Horizontal deflection output for monitor and real flat TV●Switch mode power supplies for CRT TV
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 12 A ICM Collector peak current (tp<5ms) 18 A IB Base Current- Continuous 6 A PTOT Total dissipation at TC=25℃ 58 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 2.15 ℃/W MD2001FX isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MD2001FX MIN TYP. MAX UNIT VCEO(sus)(1...