MDD14N25C - N-Channel MOSFET

Datasheet Summary

Features

With To-252(DPAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

📥 Download Datasheet

Datasheet Details

Part number	MDD14N25C
Manufacturer	INCHANGE
File Size	204.10 KB
Description	N-Channel MOSFET
Datasheet	MDD14N25C Datasheet
Additional preview pages of the MDD14N25C datasheet.

📁 Similar Datasheet

MDD14N25C - N-Channel MOSFET (MagnaChip)
MDD142-08N1 - Standard Rectifier (IXYS)
MDD142-12N1 - Standard Rectifier (IXYS)
MDD142-14N1 - Standard Rectifier (IXYS)
MDD142-16N1 - Standard Rectifier (IXYS)
MDD142-18N1 - Standard Rectifier (IXYS)
MDD1051 - Single N-channel MOSFET (MagnaChip)
MDD1080-18N7 - Diode Modules (IXYS)
MDD1080-24N7 - Diode Modules (IXYS)
MDD1080-28N7 - Diode Modules (IXYS)

Other Datasheets by INCHANGE

MDD1051RH - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor MDD14N25C ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·Load switch ·Power management ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 250 VGSS ID IDM Gate-Source Voltage Drain Current-ContinuousTc=25℃ Tc=100℃ Drain Current-Single Pulsed ±30 10.2 6.4 40.8 PD Total Dissipation @TC=25℃ 69.4 Tj Max.

Published: Sep 4, 2020 |