MDF18N50BTH - N-Channel MOSFET

Inchange Semiconductor

Key Features

Drain-source on-resistance: RDS(on) ≤ 0.27Ω (max).
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

MDF18N50BTH n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	MDF18N50BTH
Manufacturer	Inchange Semiconductor
File Size	240.98 KB
Description	N-Channel MOSFET
Datasheet	MDF18N50BTH Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MDF18N50B	N-Channel MOSFET	MagnaChip
MDF18N50	N-Channel MOSFET	MagnaChip
MDF18N50TH	N-Channel MOSFET	MagnaChip
MDF10	SURFACE MOUNT BRIDGE	MIC
MDF10N055TH	N-channel MOSFET	MagnaChip

Other Datasheets by Inchange Semiconductor

Part Number	Description
MDF18N50TH	N-Channel MOSFET
MDF10N60GTH	N-Channel MOSFET
MDF9N50BTH	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

isc N-Channel MOSFET Transistor ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.27Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Power Supply ·High Current, High Speed Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 72 PD Total Dissipation @TC=25℃ 37 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 3.4 UNIT ℃/W MDF18N50BTH isc website：www.iscsemi.