Inchange Semiconductor MDO1201-22N1
Rectifier Diode
| Part No. | MDO1201-22N1 |
|---|---|
| Datasheet | MDO1201-22N1 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Rectifier Diode |
| Buy | Stock & Price |
FEATURES
●Isolated Base Plate●Low Forward Voltage
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●These devices are ideally suited for power converters, motors drives and other applications where switching losses are significant portion of the total losses.ABSOLUTE MAXIMUM RATINGS
SYMBOL PARAMETER VR Repetitive Peak Reverse Voltage IF(AV) Average Forward Current IFSM Surge Forward Current VISO Maximum Power Dissipation TJ Junction Temperature Tstg Storage Temperature Range CONDITIONS TC=100℃ Tp=10ms，TJ=160℃ VALUE UNIT 2200 V 1280 A 36 kA 3000 V -40~160 ℃ -55~160 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Per diode MAX 0.042 UNIT ℃/W isc website： 1 isc & iscsemi is registered trademarkELECTRICAL CHARACTERISTICS
SYMBOL PARAMETER VFM Forward Voltage drop IRRM Instantaneous Reverse Current PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) MDO1201-22N1 Rectifier Diode Module CONDITIONS IF= 3140A...