MJ11012
MJ11012 is NPN Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Darlington Power Transistor
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.)
- High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A
- Low Collector Saturation Voltage-
: VCE (sat)= 3.0V(Max.)@ IC= 20A
- plement to the PNP MJ11011
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general purpose amplifier...
