MJ11012 Overview
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
| Part number | MJ11012 |
|---|---|
| Datasheet | MJ11012-INCHANGE.pdf |
| File Size | 203.58 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ11012 | 30 AMPERE DARLINGTON POWER TRANSISTORS | Motorola Inc |
| MJ11012 | High-Current Complementary Silicon NPN Transistors | ON Semiconductor | |
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MJ11012 | NPN Transistor | DIGITRON |
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