MJ11012 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.
MJ11012 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ11012 | 30 AMPERE DARLINGTON POWER TRANSISTORS |
| MJ11012 | High-Current Complementary Silicon NPN Transistors | |
DIGITRON |
MJ11012 | NPN Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage-.