Datasheet4U Logo Datasheet4U.com

MJ11014 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor MJ11014.

General Description

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltage- : VCE (sat)= 3.0V(Max.)@ IC= 20A ·Complement to the PNP MJ11013 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general purpose amplifier applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 90 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continunous 30 A ICM Collector Current-Peak 50 A IB Base Current-Continunous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 1 A 200 W 200 ℃ Tstg Storage Temperature Range -55~+200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.87 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 20A;

MJ11014 Distributor

Similar Datasheet

Brand Logo Part Number Description Manufacturer
Motorola Inc Logo MJ11014 30 AMPERE DARLINGTON POWER TRANSISTORS Motorola Inc
ON Semiconductor Logo MJ11014 DARLINGTON POWER TRANSISTORS ON Semiconductor
DIGITRON Logo MJ11014 NPN Transistor DIGITRON

More Datasheets from Inchange Semiconductor

Part Number Description
MJ11011 PNP Transistor
MJ11012 NPN Transistor
MJ11015 PNP Transistor
MJ11017 PNP Transistor
MJ11018 NPN Transistor
MJ11019 PNP Transistor
MJ11020 NPN Transistor
MJ11022 NPN Transistor
MJ11028 NPN Transistor
MJ11029 PNP Transistor