MJ11015 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage-.
MJ11015 is PNP Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ11015 | 30 AMPERE DARLINGTON POWER TRANSISTORS |
| MJ11015 | High-Current Complementary Silicon PNP Transistors |
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= -20A ·Low Collector Saturation Voltage-.