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MJ11018 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Darlington Power Transistor MJ11018.

General Description

·Collector-Emitter Sustaining Voltage : VCEO(SUS)= 150V (Min.) ·High DC Current Gain- : hFE= 400(Min.)@IC= 10A ·Low Collector Saturation Voltage- : VCE (sat)= 1.0V(Max.)@ IC= 5.0A ·Complement to the PNP MJ11017 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifiers, low frequency switching and motor control applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 150 VEBO Emitter-Base Voltage 5 IC Collector Current-Continunous 15 ICM Collector Current-Peak 30 IB Base Current-Continunous 0.5 PC Collector Power Dissipation @TC=25℃ 175 Tj Junction Temperature 175 Tstg Storage Temperature Range -65~175 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.86 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor MJ11018 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA;

IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 10A;

MJ11018 Distributor

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