MJ11028
MJ11028 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.)
- High DC Current Gain-
: h FE= 1000(Min.)@IC= 25A : h FE= 400(Min.)@IC= 50A
- plement to the PNP MJ11029
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for use as output devices in plementary general purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continunous
Collector Current-Peak
Base Current-Continunous
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~+200...
