MJ11028 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.
MJ11028 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
NTE Electronics |
MJ11028 | Silicon Darlington NPN Transistor |
Motorola Semiconductor |
MJ11028 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
onsemi |
MJ11028 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
Seme LAB |
MJ11028 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
DIGITRON |
MJ11028 | Power Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 60V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.