Datasheet Details
| Part number | MJ12003 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.43 KB |
| Description | NPN Transistor |
| Datasheet | MJ12003-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJ12003 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.43 KB |
| Description | NPN Transistor |
| Datasheet | MJ12003-INCHANGE.pdf |
|
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· Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 750V(Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in CRT deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 1500 V VCEO(SUS) Collector-Emitter Voltage 750 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous 3 A IE Emitter Current-Continuous 7 A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W MJ12003 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=10mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ12003 | 4 Amp NPN Silicon Power Transistor | Motorols |
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