Datasheet Details
| Part number | MJ12021 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.95 KB |
| Description | NPN Transistor |
| Download | MJ12021 Download (PDF) |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJ12021 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 201.95 KB |
| Description | NPN Transistor |
| Download | MJ12021 Download (PDF) |
|
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·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·Fast Turn-Off Time ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high resolution video systems, such as : high density graphic displays, data terminals, video scanners.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 16 A IB Base Current-Continuous 6 A IBM Base Current-Peak 12 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.17 UNIT ℃/W MJ12021 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=30mA ;
IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ12021 | (MJ12020 - MJ12022) NPN Silicon Deflection Power Transistor | Motorols |
| Part Number | Description |
|---|---|
| MJ12020 | NPN Transistor |
| MJ12022 | NPN Transistor |
| MJ12002 | NPN Transistor |
| MJ12003 | NPN Transistor |
| MJ12004 | NPN Transistor |
| MJ12005 | NPN Transistor |
| MJ1000 | NPN Transistor |
| MJ10002 | NPN Transistor |
| MJ10005 | NPN Transistor |
| MJ10005P | NPN Transistor |