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MJ15004 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·High DC Current Gain- : hFE= 25(Min)@IC= -5A ·Wide Area of Safe Operation ·Complement to Type MJ15003 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For high power audio,disk head positioners and other linear applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -140 V VCEO Collector-Emitter Voltage -140 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -20 A IB Base Current-Continuous -5 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.7 ℃/W MJ15004 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademar isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A;

IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A ;

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