Datasheet Details
| Part number | MJ3041 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.54 KB |
| Description | NPN Transistor |
| Datasheet | MJ3041-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | MJ3041 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.54 KB |
| Description | NPN Transistor |
| Datasheet | MJ3041-INCHANGE.pdf |
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|
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·High DC Current Gain ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for line operated amplifier series pass and switching regulator applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 400 VCEO Collector-Emitter Voltage 300 VEBO Emitter-Base Voltage 8 IC Collector Current-Continuous 10 ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 15 175 -65~200 Tstg Storage Temperature Range -65~200 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.0 UNIT ℃/W MJ3041 isc website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A ,IB= 50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A ,IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 5A ,IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 2.5A ;
| Part Number | Description |
|---|---|
| MJ3000 | NPN Transistor |
| MJ3001 | NPN Transistor |