Inchange Semiconductor MJ4030
Silicon PNP Darlingtion Power Transistor
| Part No. | MJ4030 |
|---|---|
| Datasheet | MJ4030 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Darlingtion Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-3 package●Respectively complement to type MJ4035
●DARLINGTON
●High DC current gain
APPLICATIONS
●For use as output devices in complementary general purpose amplifier applications.ABSOLUTE MAXIMUM RATINGS
(TC=25℃) SYMBOL VCBO VCEO VEBO IC IB B MJ4030 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -60 -60 -5 -16 UNIT V V V A A W ℃ ℃ -0.5 150 200 -55~200 PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc Website： datasheet pdf - INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MJ4030 MAX UNIT VCEO Collector-Emitter Breakdown Voltage IC=-100mA; IB= 0 B -60 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC=-10A; IB=-40mA...