Inchange Semiconductor MJ4031
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJ4031 |
|---|---|
| Datasheet | MJ4031 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Darlingtion Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●With TO-3 packaging●Very high DC current gain
●Monolithic darlington transistor with integrated antiparallel collector-emitter diode
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Electronic ignition●Alternator regulator
●Motor controls
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PD Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Max.Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.Junction Temperature -80 V -80 V -5 V -15 A -20 A -0.5 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website： 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ4031ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETE...